Article 10122

Title of the article

ANALYSIS OF FAILURES OF FIELD-EFFECT TRANSISTORS WHEN MONITORING THE OPERABILITY OF THE DEVICE BY INDIRECT PARAMETERS 

Authors

Maksim L. Savin, Acting director, Mytishchi Research Institute of Radio Measuring Instruments (2А Kolpakova street, Mytishchi, Moscow region, Russia), E-mail: savin@mniirip.ru
Aleksey K. Grishko, Candidate of technical sciences, associate professor, associate professor of the sub-department of radio equipment design and production, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: alexey-grishko@rambler.ru
Vyacheslav D. Zuev, Candidate of technical sciences, general director, Scientific and Research Institute of Electronic and Mechanic Instruments (44 Karakozova street, Penza, Russia), E-mail: vdzuev@yandex.ru
Igor I. Kochegarov, Candidate of technical sciences, associate professor, associate professor of the sub-department of radio equipment design and production, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: kipra@mail.ru
Elena M. Solovieva, Master degree student, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: kipra@pnzgu.ru 

Abstract

Background. According to electronics failure analysis, 90 % of failures occur in a very limited number of failed component types. Possible causes of failures of these types of components are easy to analyze. The paper considers elements widely used in modern equipment – field-effect transistors. The analysis of statistical data on the causes of failures is carried out, aimed at determining the operable state of the device. Materials and methods. Methods of system analysis, reliability theory, and semiconductor physics are used to solve the set tasks. Results. Under conditions of stable operation (constant switching frequency, duty cycle, flowing current, ambient temperature), the transistor temperature can be used as a parameter reflecting the channel resistance and other degradation processes (increase in leakage current, increase in the duration of the switching process). In this case, it is necessary to take into account the dependence of the channel resistance on temperature. Conclusions. On the basis of the data presented in the work, when developing devices, it is advisable to create a system for recording key parameters that allows real-time monitoring of operating conditions and, taking them into account, predicting the remaining life of the electronic unit. 

Key words

failure, reliability, temperature, transistor, resource, model 

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For citation

Savin M.L., Grishko A.K., Zuev V.D., Kochegarov I.I., Solov'eva E.M. Analysis of failures of field-effect transistors when monitoring the operability of the device by indirect parameters. Nadezhnost' i kachestvo slozhnykh sistem = Reliability and quality of complex systems. 2022;(1):91–97. (In Russ.). doi:10.21685/2307-4205-2022-1-10 

 

Дата создания: 25.05.2022 13:57
Дата обновления: 27.05.2022 13:07